smd type transistors sot-223 unit: mm 3.00 +0.1 -0.1 0.70 +0.1 -0.1 2.9 4.6 6.50 +0.2 -0.2 3.50 +0.2 -0.2 0.90 +0.2 -0.2 7.00 +0.3 -0.3 1.65 +0.15 -0.15 0 .1max 0.90 +0.05 -0.05 12 4 3 1 base 2 collector 3 emitter FZT1053A features v ceo =75v. 4.5 amp continuous current. 10 amp pulse current. low saturation voltage. high gain. extremely low equivalent on-resistance; r ce(sat) =78mat4.5a. absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 150 v collector-emitter voltage v ceo 75 v emitter-base voltage v ebo 7.5 v peak pulse current i c 4.5 a continuous collector current i cm 10 a base current i b 500 ma power dissipation p tot 2.5 w operating and storage temperature range t j, t stg -55to+150 smd type transistors smd type transistors smd type transistors smd type transistors smd type transistors smd type product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com 4008-318-123
smd type transistors electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector-base breakdown voltage v (br)cbo i c =100a 150 250 v collector-emitter breakdown voltage * v (br)ceo i c =10ma 75 100 v emitter-base breakdown voltage v (br)ebo i e =100a 7.5 8.8 v collector-base cut-off current i cbo v cb =120v 0.9 10 na collector-emitter cut-off current i ces v ce =120v 1.5 10 na emitter cut-off current i ebo v eb =4v 0.3 10 na collector-emitter saturation voltage * v ce( sat) i c =0.2a, i b =20ma i c =0.5a, i b =20ma i c =1a, i b =10ma i c =2a, i b =100ma i c =4.5a, i b =200ma 21 55 150 160 350 30 75 200 210 440 mv base-emitter saturation voltage * v be( sat) i c =3a, i b =100ma 900 1000 mv base-emitter on voltage * v be(on )i c =3a, v ce =2v 825 950 mv i c =10ma, v ce =2v* 270 440 i c =0.5a, v ce =2v* 300 450 1200 i c =1a, v ce =2v* 300 450 i c =4.5a, v ce =2v* 40 60 i c =10a, v ce =2v* 20 transitional frequency f t i c =50ma, v ce =10v f=100mhz 140 mhz output capacitance c obo v cb =10v, f=1mhz 21 30 pf turn-on time t (on) i c =2a, v cc =50v 162 ns turn-off time t (off) i b1 =i b2 =20ma 900 ns * pulse test: tp = 300 s; d 0.02. static forward current transfer ratio h fe smd type transistors FZT1053A smd type transistors smd type transistors smd type transistors smd type transistors smd type transistors smd type product specification sales@twtysemi.com 2 of 2 http://www.twtysemi.com 4008-318-123
|
